Research Interest

Renaud Leturcq’s research interests mainly focus on understanding and tailoring the electronic properties of semiconductor materials and nanostructures (nanowires, 2D materials) in order to control their electrical and optical properties. He has a strong experience on material science, from material synthesis (liquid phase) and deposition (vapor phase, with a particular focus on atomic layer deposition) to device fabrication using state-of-the-art nanolithography techniques. In LIST, his activities more specifically focus on transparent oxide semiconductors and transparent conducting materials for applications in the domains of smart windows (e.g. low emissivity), energy harvesting and storage (electrodes and protective layers for photovoltaics, electrodes for supercapacitors) and sensing (metal oxide based gas sensors).

Biography

Renaud is Lead R&T Associate in the group Transparent and Optically Tunable Electronics in the MRT Department of LIST. He holds a PhD on Solid State Physics from the University of Paris Orsay, defended in 2002. He is a senior researcher with 20+ years of experience in the field of fabrication and electronic properties of semiconductor nanostructures. During his post-doc at ETH Zürich (Switzerland) and his senior researcher position at IEMN-CNRS Lille (France), he has been leading teams (2-5 persons) and projects on semiconductor nanowires (mainly from III-V semiconductors) from synthesis (MOCVD, MBE, in particular focusing on doping), device fabrication, and material and device characterization. He has joined LIST in February 2014, where he is leading activities on functional transparent layers based on metal oxides for sensing and optoelectronic applications. During his research carrier he has been involved in 11 projects, including 5 projects as PI. These projects include competitive projects (from national and European fundings), as well as collaborative projects, such as with the companies Carlex and MET-LUX in Luxembourg. He is co-author of over 80 publications (h-index of 23) and is co-inventor of 8 patents.